Optimization of transients and FFT of SCMOS Memory Sense Amplifiers for DRAM using 300nm
Keywords:
Sense Amplifiers, DRAM, FFT, CMOS memories, Bitlines, wordlinesAbstract
This paper presents incorporates reference designs of Sense amplifiers and detailed FFT output plots in terms of amplitude or magnitude, phase and delay for scalable CMOS sense amplifiers using 300nm VLSI technology for scalable MOSFET transistor. Sensing defined as determination and detection of data contents in a particular or directed memory cell or binary bit . Sense amplifier circuits are used parelly with semiconductor memories namely DRAM SRAM and are main elements in defining the price, power and most importantly evaluation or appraisal of scalable CMOS semiconductor circuits or memories. The presented circuit topologies in this paper are made by using 0.3µm library model process technology using B3M4 SPICE models. The presented paper also incorporates circuits operational descriptions, timing analysis, plots of FFT, also tabulation of amplitude, phase, and delay is done at range frequency range from few MHz to 10 THz. Here a layout view or backend design and connection logic for DRAM arrays to SCMOS Sense circuits amplifiers. DRC and NCC checks are also performed on the same.
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