Study of CMOS Technology based Different VLSI Circuit for Low Power Application
Keywords:
Shift Register, CMOS, Low PotentialAbstract
It is dynamic in the plot with the participation of the transmission portal. Dynamic potential is largely saved by using the minimum number of portable using the clock indicator in the overall path configuration, reducing both the capacitive load and the switching activity of the nodes inside the track. By minimizing the load and loading each internal node compared to variations of the input data indicator, its potential depletion is further reduced. Threshold intensity drop is the main consideration of potential depletion introduced at the technology level for intensity scaling. The optimal threshold intensity is selected based on the switching and leakage undercurrent settings. The study of Another 4bit Serial Input Parallel Output (SIPO) shift register named SeriesStacking in Portable Count Depletion Shift Register (STCRSR) is developed to uphold the capability of outlined cleat plot.
References
K. Absel, L. Manuel, and R. K. Kavitha, “Dynamic low-potential two-node pulse matching slot with efficient embedded logic,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 21, no. 9, pp. 1693–1704, 2013.
M. Alioto, E. Consoli, and G. Palumbo, “General strategies for tracing the nanoscale stopper in the energy hysteresis space,” IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 57, no. 7, pp. 1583–1596, 2010.
A. Awad, A. Takahashi, S. Tanaka, and C. Kodama, “A rapid breakthrough in masked escalation accounting for process variations with new intensity modeling,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 25, no. 3, pp. 998–1011, 2016.
P. Bhattacharjee and A. Majumder, “A sturdy, change-sensitive enclosed wedge for a potentially stressed FSM application,” Journal of Paths, Systems and Computing, vol. 28, no. 7, p. 120, 2018.
S. Borkar, “Plot challenges of technology scaling,” IEEE Micro, vol. 19, no. 4, pp. 23–29, 1999.
P. F. Butzen and R. P. Ribas, “Leakage undercurrent in CMOS submicrometer gate,” Universidade Federal do Rio Grande do Sul, pp. 1–30, 2006.
J. Chen, Y. Liu, Z. Zhu, and W. Zhu, “An adaptive hybrid memetic breakthrough for VLSI floor planning without thermal-aware slicing,” Integration, the VLSI Journal, vol. 58, pp. 245–252, 2017.
D. Chinnery and K. Keutzer, “An overview of factors influencing potential depletion to bridge the potential gap between ASICs and custom: Tools and techniques for low-potential plotting,” in ASICs: The Book, New York, NY, USA: Springer, 2007, ch. 2, pp. 1163–1170.
W. Chung, T. Lo, and M. Sachdev, “A comparative analysis of low-potential, low-intensity triggered latches,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 10, no. 6, pp. 913–918, 2002.
E. Consoli, M. Alioto, G. Palumbo, and J. Rabaey, “Conditional push–pull pins with 726 fJ/ps energy-delay product in 65 nm CMOS,” in Proc. IEEE Int. Solid-State Circuits Conf., 2012, vol. 55, no. 8, pp. 482–483.
S. Correia, M. Beko, L. Cruz, and S. Tomic, “Elephant herding escalation for energy-based localization,” Sensors, vol. 18, no. 2849, pp. 1–14, 2018.
T. Darwish and M. Bayoumi, “Reducing modified SAFF cleat conversion for low-potential applications,” in Proc. Int. Conf. Microelectronics (ICM), 2002, pp. 96–99.
J. Dash, B. Dam, and R. Swain, “Optimal plotting of linear multiphase band stopping filters using advanced cuckoo seed search swarm enhancement,” Journal of Soft Computing Applications, vol. 52, pp. 435–445, 2017.
M. Dehbashian and M. Maymandi-Nejad, “Innovative expansion core for analog circuit layout automation using miniature circles,” Engineering Applications of Artificial Intelligence, vol. 58, pp. 62–78, 2017.
A. Firdous, M. Anand, and B. Rajan, “Diagram and implementation of advanced leak depletion techniques in VLSI CMOS paths,” Journal of Engineering, vol. 12, no. 2, pp. 155–160, 2017.
Downloads
How to Cite
Issue
Section
License

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.